Visualization of a direct numerical simulation model. Historically, simulations used in different fields developed largely independently, but 20th century studies of systems theory and cybernetics combined with spreading use of computers across all those fields have led to some unification and a more systematic view of the concept.
IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.
Though these days process papers actually tend to be after the launch of the relevant product, such is the preoccupation with trade secrecy. This tutorial will cover the evolution of logic transistors; then, state-of-the-art FinFETs, including layout, key design rules, short channel effects, multi-Vth engineering, local layout effects LLEvariability, etc.
Hardware Opportunities in Cognitive Computing: This talk reviews recent progress towards brain-inspired computing architectures, ranging from systems that combine CMOS devices in different and unconventional ways, to those built around emerging NVM Non-Volatile Memory devices; and from systems designed to accelerate conventional ML Machine Learning through hardware innovation, to systems that seek to transcend the limitations of current ML algorithms, e.
Sayeef Salahuddin, UC Berkeley. Sayeef will review the physical origin of negative capacitance, and how it can be used to amplify the electrostatic field.
Current understanding of this phenomenon will be reviewed, together with possible pathways to optimize transistor performance for scaled nodes.
Eric Pop, Stanford University. Pop will explain the operation and limitations of non-volatile phase-change memory PCM and resistive random-access memory ReRAMpresenting the two memory types in context, and emphasizing their thermal and energy limitations. He will also discuss modern devices, challenges, test structures, and simple models required to understand their operation.
This talk will introduce interposer and fanout packaging technologies, their market drivers, application examples and infrastructure evolution, and the latest state of the art innovations. The first three are from 3.
Gen will focus on Si- and SiGe-based FinFET technologies, and discuss transistor optimization in terms of mobility and reliability, and also discuss issues specific to the gate-dielectric interface on SiGe channels. Steve will focus on gate-stack engineering for advanced FinFETs, in particular from a Vt-modulation perspective using work-function engineered metal-gate electrodes.
We are now seeing multiple-Vt options in the leading-edge processes, so this should help us understand how that is done.
He will deal with EUV-related fabrication challenges, track height scaling in standard cells, novel conductor materials, as well as performance issues such as trade-offs in power rails and signal wires and circuit sensitivity to RC delay. Quite a lot to cover in an hour or so!
Now we know that Intel is using cobalt interconnect in their nm process, the materials segment will definitely be apposite. In this session we will hear about transistor reliability issues such as gate oxide integrity, self-heating and transistor aging issues like BTI and hot carrier effects; none of them new, but at 5 nm and below there may be extra complications.
Andy will wrap up the short course with a presentation about design-technology co-optimization DTCO for beyond the 5nm node. Andy joined Chipworks now TechInsights a couple of years ago, and has ramped up their process and design architecture offerings by an order of magnitude.
His topics will be: Intel posted this graphic looking at data storage as equivalent to beer storage, which is a fun way to look at it: Of course, that was a plug for their Optane 3D-Xpoint technology, but I guess we can see the automotive use there, and IoT memory in everything from the bottle to the mega-mart… So we have: Alfonso will review the scaling of embedded nonvolatile memories for automotive applications.
He will present the key technology scaling challenges and discuss their solutions to drive eNVM technology to meet the future requirements for automotive electronics. This new class of memory boasts an unparalleled storage density while rivaling DRAM in terms of access latency.
Thomas will discuss the key breakthroughs in ferroelectric devices that have the potential to bring this memory into CMOS-based technologies for embedded applications.
If you have the stamina, at 5. Monday Monday morning, we have the plenary sessionwith three pertinent talks on the challenges and potential of contemporary electronics:thorough evaluation will reveal who can actually deliver for your organization.
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